Low threshold voltage,highly stable electroforming-free threshold switching characteristics in VOx films-based device

Threshold switching (TS) devices have evolved as one of the most promising elements in memory circuit due to their important significance in suppressing crosstalk current in the crisscross array structure. However, the issue of high threshold voltage (V_th) and low stability still restricts their potential applications. Herein, the vanadium oxide (VO_x) films deposited by the pulsed laser deposition (PLD) method are adopted as the switching layer to construct the TS devices. The TS devices with Pt/VO_x/Pt/PI structure exhibit non-polar, electroforming-free, and volatile TS characteristics with an ultralow V_th (+0.48 V/−0.48 V). Besides that, the TS devices also demonstrates high stability, without obviously performance degradations after 350 cycles of endurance measurements. Additionally, the transition mechanism is mainly attributed to the synergistic effect of metal-insulator transition of VO₂ and oxygen vacancies. Furthermore, the nonvolatile bipolar resistance switching behaviors can be obtained by changing oxygen pressure during the deposition process for switching films. This work demonstrates that vanadium oxide film is a good candidate as switching layer for applications in the TS devices and opens an avenue for future electronics.     

Optical properties of transparent polycrystalline ruby (Cr:Al2O3) fabricated by high-pressure spark plasma sintering

Doped transparent ceramics with high optical quality can serve as materials for photonic applications such as laser gain media. In that regard, transparent polycrystalline alumina has potential for high-power applications due to its excellent physical and chemical properties, combined with unique doping possibilities. However, optical birefringence of Al₂O₃ crystals make achieving sufficiently high optical transmittance a processing challenge. In the present study, we demonstrated fabrication of highly transparent 0.5 at.% Cr:Al₂O₃ ceramics by high-pressure spark plasma sintering (HPSPS). The optical properties of these polycrystalline ruby ceramics were analyzed in order to assess possible laser operation (at 694.3 nm). The obtained ceramics exhibit high in-line transmittance (～72.5 % at 700 nm), equivalent to a scattering coefficient of 2.15 cm^?1, and characteristic ruby photoluminescence. The theoretically estimated lasing threshold and percentage of absorbed pump power indicate that such ruby ceramic lasers could operate at reasonable thresholds of 80?225 mW with short lengths of 0.5?5 mm. Thus, HPSPS is a promising method for producing laser-quality doped transparent ceramics for compact laser systems.     

Noncentrosymmetric Tetrel Pnictides RuSi4P4 and IrSi3P3: Nonlinear Optical Materials with Outstanding Laser Damage Threshold

Noncentrosymmetric (NCS) tetrel pnictides have recently generated interest as nonlinear optical (NLO) materials due to their second harmonic generation (SHG) activity and large laser damage threshold (LDT). Herein nonmetal-rich silicon phosphides RuSi₄P₄ and IrSi₃P₃ are synthesized and characterized. Their crystal structures are reinvestigated using single crystal X-ray diffraction and ²⁹Si and ³¹P magic angle spinning NMR. In agreement with previous report RuSi₄P₄ crystallizes in NCS space group P1, while IrSi₃P₃ is found to crystallize in NCS space group Cm, in contrast with the previously reported space group C2. A combination of DFT calculations and diffuse reflectance measurements reveals RuSi₄P₄ and IrSi₃P₃ to be wide bandgap (E_g) semiconductors, E_g = 1.9 and 1.8 eV, respectively. RuSi₄P₄ and IrSi₃P₃ outperform the current state-of-the-art infrared SHG material, AgGaS₂, both in SHG activity and laser inducer damage threshold. Due to the combination of high thermal stabilities (up to 1373 K), wide bandgaps (≈2 eV), NCS crystal structures, strong SHG responses, and large LDT values, RuSi₄P₄ and IrSi₃P₃ are promising candidates for longer wavelength NLO materials.     

基于阶段注意力机制的电力线提取算法

电力系统维护是电力系统稳定运行的重要保障，应用智能算法的无人机电力巡检则为电力系统维护提供便捷。电力线提取是自主电力巡检以及保障飞行器低空飞行安全的关键技术，结合深度学习理论进行电力线提取是电力巡检的重要突破点。本文将深度学习方法用于电力线提取任务，结合电力线图像特点嵌入改进的图像输入策略和注意力模块，提出一种基于阶段注意力机制的电力线提取模型（SA-Unet）。本文提出的SA-Unet模型编码阶段采用阶段输入融合策略（Stage input fusion strategy， SIFS），充分利用图像的多尺度信息减少空间位置信息丢失。解码阶段通过嵌入阶段注意力模块（Stage attention module，SAM）聚焦电力线特征，从大量信息中快速筛选出高价值信息。实验结果表明，该方法在复杂背景的多场景中具有良好的性能。     

结合位图切割和区域合并的彩色图像分割

就经典分水岭图像分割算法中存在的过分割问题，提出一种结合位图切割和区域合并的彩色图像分割算法。对原始彩色图像通过空域梯度算子求其梯度图像，并利用位图切割重建梯度图像；对新梯度图像进行分水岭预分割；对预分割图像基于异质性最小原则进行区域合并，并获得最终分割结果。相比于现有的同类方法，该算法引入位图切割，抑制噪声对分割结果的影响，在边缘模糊处分割准确，得到符合人类视觉的较小分割区域数目，同时在运行效率上提高。     

正则化图形模糊聚类及鲁棒分割算法

针对现有图形模糊聚类算法合理性差和抗噪能力弱的问题，提出嵌入对称正则项的图形模糊聚类鲁棒算法。将样本聚类所对应的中立度与拒分度相结合构造对称正则项，嵌入现有图形模糊聚类所对应的目标函数；同时，利用像素邻域所对应的均值信息辅助当前像素聚类并构造了空间信息约束正则项，采用拉格朗日乘子法获得正则化图形模糊聚类鲁棒分割算法。不同噪声干扰图像分割结果表明，所建议的分割算法是有效的，相比现有的鲁棒模糊聚类分割算法具有更强的抑制噪声能力。     

加权信息熵与增强局部二值模式结合的人脸识别

针对人脸识别因光照、姿态、表情、遮挡及噪声等多种因素的影响而导致的识别率不高的问题，提出一种加权信息熵（IEw）与自适应阈值环形局部二值模式（ATRLBP）算子相结合的人脸识别方法（IE （w） ATR-LBP）。首先，从原始人脸图像分块提取信息熵，得到每个子块的IEw；然后，利用ATRLBP算子分别对每个人脸子块提取特征从而得到概率直方图；最后，将各个块的IEw与概率直方图相乘，再串联成为原始人脸图像最后的特征直方图，并利用支持向量机（SVM）对人脸进行识别。在AR人脸库的表情、光照、遮挡A和遮挡B四个数据集上，IE （w） ATR-LBP方法分别取得了98.37%、94.17%、98.20%和99.34%的识别率。在ORL人脸库上，IE （w） ATR-LBP方法的最大识别率为99.85%；而且在ORL人脸库5次不同训练样本的实验中，与无噪声时相比，加入高斯和椒盐噪声后的平均识别率分别下降了14.04和2.95个百分点。实验结果表明，IE （w） ATR-LBP方法能够有效提高人脸在受光照、姿态、遮挡等影响时的识别率，尤其是存在表情变化及脉冲类噪声干扰时的识别率。     

面向电信承载网的监控系统设计与实现

面对电信承载网连接的日益增长的海量终端设备，运营商需要结合网络拓扑对终端设备产生的数据进行高效的汇聚统计、异常分析、故障定位处理等操作。针对已有系统存在的操作困难、分析效率低等问题，设计与实现了一个面向电信承载网的高效监控系统，提供实时与离线数据分析和多维可视化分析的能力。对网管、认证、终端等系统及设备采集的数据进行结构化存储，对采集的数据进行拓扑相关性和时间序列方法分析，根据分析结果实现基于动态阈值控制的异常实时告警、定位等操作，并提供多维度可视化分析对网络状态进行实时监控。实际应用结果表明，该系统性能优异，具有良好交互性，能较好地满足承载网运维人员业务分析需求。     

自适应天牛须优化与K均值聚类的图像分割算法研究

在机器识别中,图像分割是重要的一个步骤,传统分割手段存在一定缺陷。针对传统K均值聚类分割的初始聚类中心敏感的缺陷进行了优化,利用自适应天牛须优化算法,避免了这一问题。通过实验结果表明,该算法(ABASK)对图像进行分割,既可以保证图像轮廓的分割,同时还可以更多地保留图像细节。